t4 - lds - 0 278, rev . 1 (12 1355) ?201 3 microsemi corporation page 1 of 7 1n6139 a ? 1n6173a available on commercial versions v oidless h ermetically s ealed b idirectional t ransient v oltage s uppressors qualified to mil - prf - 19500/ 516 qualified levels : jan, jantx, jantxv and jans* description this series of industry recognized voidless, hermetically sealed bidirectional transient voltage suppressor s (tvs) are military qualified to mil - prf - 19500/516 and are ideal for high - reliability applications where a failure cannot be to lerated. they provide a w orking p eak ? s tandoff? v oltage selection from 5. 7 to 152 volts with a 1500 w rating for a 10/1000 s pulse . they are very robust in hard - glass construction and use internal category 1 metallurgical bonds for high reliability . these devices are available as both a non - suffix part and an ?a? version part involving different voltage tolerances as described in the nomenclature section . these d evices are also available in a surface mount melf package configuration. ? c ? package also available in : ? c ? sq - melf package (surface mount) 1n 6139 us ? 1n 6173 us important: for t he latest information, visit our website http://www.microsemi.com . features ? high surge current and peak pulse power provides transient voltage protection for sensitive circuits . ? triple - layer passivation . ? inter nal ? category 1 ? metallurgical bonds . ? voidless hermetically sealed glass package . ? jan, jantx, and jantxv qu alified versions are available per mil - prf - 19500/ 516. ? * jans available for 1n61 4 3 ( a ) thru 1n61 73( a ) per mil - prf - 19500/516 as well as further option s for screening in reference to mil - prf - 19500 for all others in this series . (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only) . applications / benefits ? mi litary and other high - reliability applications. ? extremely robust construction. ? extensive range in w orking p eak ? s tandoff? v oltage (v wm ) from 5.7 to 152 volts. ? 1500 w att p eak p ulse p ower (p pp ) for a 10/1000 us test pulse. ? esd and eft protection per iec6100 - 4 - 2 and iec61000 - 4 - 4 respectively . ? protection from the secondary effects of lightning per select levels in iec61000 - 4 - 5. ? flexible axial - leaded mounting terminals . ? non - sensitive to esd per mil - s td - 750 m ethod 1020 . ? inherently radiation hard as described in microsemi ? micronote 050 ?. m axim um ratings @ t a = 25 o c unless otherwise noted. msc ? law rence 6 lake street, lawrence, ma 01841 tel: 1 - 800- 446- 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc ? ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 5 5 to + 175 o c thermal resistance junc tion - to - lead ( 1 ) r ? jl 2 0 o c /w peak pulse power @ 25 oc p pp 1500 w off - state power @ t l = 75 o c ( 1 ) p d 5.0 w off - state power @ t a = 25 o c ( 2 ) p d 3.0 w impulse repetition rate df 0.01 % solder temperature @ 10 s t sp 260 o c notes : 1. at 3/8 inch lead len gth from body (see f igure 4 ) . 2. steady - state power ratings with reference to ambient are for pc boards where thermal resistance from mounting point to ambient is sufficiently controlled where t op or t j(max) is not exceeded (also see f igure 6 ) .
t4 - lds - 0 278, rev . 1 (12 1355) ?201 3 microsemi corporation page 2 of 7 1n6139 a ? 1n6173a mechanical and packaging ? case: hermetically sealed voidless hard glass with t ungsten slugs . ? terminals: axial - leads are t in/ l ead over c opper. rohs compliant matte - t in is available on commercial gra de only. ? marking: body paint and part number . ? polarity: no polarity marking for these bidirectional tvss . ? tape & ree l option: standard per eia - 296. consult factory for quantities. ? w eight: approximately 1270 milligrams. ? see p ackage d imensions on last page. part nomenclature applicable to entire series: jan 1n 61 39 a e3 reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = c ommercial jedec type number see electrical characteristics t able rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant voltage tolerance a = standard blank = 5% higher v c , 5% lower min. v (br) and 5% lower i pp applicable to 1n6143 (a) ? 1n6173 (a) only: jans 1n6143 a reliability level jan s = jan s level jedec type number see electrical characteristics t able voltage tolerance a = standard blank =5% higher v c , 5 % lower min. v (br) and 5% lower i pp applicable to 1n6139(a) ? 1n6142(a) only: msp 1n6139 a e3 reliability level msp (reference jans) jedec type number see electrical characteristics t able rohs comp liance e3 = rohs c ompliant blank = non - rohs c ompliant voltage tolerance a = standard blank =5% higher v c , 5% lower min. v (br) and 5% lower i pp
t4 - lds - 0 278, rev . 1 (12 1355) ?201 3 microsemi corporation page 3 of 7 1n6139 a ? 1n6173a symbols & definitions symbol definition v ( br ) minimum breakdown voltage: the minimum voltage the devic e will exhibit at a specified current. v wm working peak voltage: the maximum peak voltage that can be applied over the operating temperature range. this is also referred to as s tandoff v oltage. i d maximum standoff current: the maximum current that wil l flow at the specified voltage and temperature. v c clamping voltage: the m aximum clamping voltage at specified i pp (peak pulse current) at the specified pulse conditions. p pp peak pulse power: the peak power dissipation resulting from the peak impulse current i pp . electrical characteristics industry type number (note 1 ) minimum breakdown voltage (note 1 ) v (br) @ i (br) rated standoff voltage v wm maximum standby current i d @ v wm maximum clamping voltage (note 1 ) v c @ i pp maximum peak pu lse current (note 1 ) i pp maximum temp. coef. of v ( br) v (br) volts ma v a volts amps %/ o c 1n6139a 7.13 175 5.7 300 11.2 133.9 .06 1n6140a 7.79 150 6.2 100 12.1 124.0 .06 1n6141a 8.65 150 6.9 100 13.4 111.9 .06 1n6142a 9.50 125 7.6 100 14.5 103 .4 .07 ? 1n6143a 10.45 125 8.4 20 15.6 96.2 .07 ? 1n6144a 11.40 100 9.1 20 16.9 88.8 .07 ? 1n6145a 12.35 100 9.9 20 18.2 82.4 .08 ? 1n6146a 14.25 75 11.4 20 21.0 71.4 .08 ? 1n6147a 15.20 75 12.2 20 22.3 67.3 .08 ? 1n6148a 17.10 65 13.7 10 25.1 59.8 .085 ? 1n6149a 19.0 65 15.2 5 27.7 54.2 .085 ? 1n6150a 20.9 50 16.7 5 30.5 49.2 .085 ? 1n6151a 22.8 50 18.2 5 33.3 45.0 .09 ? 1n6152a 25.7 50 20.6 5 37.4 40.1 .09 ? 1n6153a 28.5 40 22.8 5 41.6 36.0 .09 ? 1n6154a 31.4 40 25.1 5 45.7 32.8 .095 ? 1n6155a 34.2 30 27. 4 5 49.9 30.1 .095 ? 1n6156a 37.1 30 29.7 5 53.6 28.0 .095 ? 1n6157a 40.9 30 32.7 5 59.1 25.4 .095 ? 1n6158a 44.7 25 35.8 5 64.6 23.2 .095 ? 1n6159a 48.5 25 38.8 5 70.1 21.4 .095 ? 1n6160a 53.2 20 42.6 5 77.0 19.5 .095 ? 1n6161a 58.9 20 47.1 5 85.3 17.6 .1 00 ? 1n6162a 64.6 20 51.7 5 97.1 15.4 .100 ? 1n6163a 71.3 20 56.0 5 103.1 14.5 .100 ? 1n6164a 77.9 15 62.2 5 112.8 13.3 .100 ? 1n6165a 86.5 15 69.2 5 125.1 12.0 .100 ? 1n6166a 95.0 12 76.0 5 137.6 10.9 .100 ? 1n6167a 104.5 12 86.6 5 151.3 9.9 .100 ? 1n6168 a 114.0 10 91.2 5 165.1 9.1 .100 ? 1n6169a 123.5 10 98.8 5 178.8 8.4 .105 ? 1n6170a 142.5 8 114.0 5 206.3 7.3 .105 ? 1n6171a 152.0 8 121.6 5 218.4 6.9 .105 ? 1n6172a 171.0 5 136.8 5 245.7 6.1 .110 ? 1n6173a 190.0 5 152.0 5 273.0 5.5 .110 ? also available in jans qualification per mil - prf - 19500/516 . notes: 1. part number without the a suffix has 5% higher v c , 5% lower minimum v (br) , and 5% lower i pp .
t4 - lds - 0 278, rev . 1 (12 1355) ?201 3 microsemi corporation page 4 of 7 1n6139 a ? 1n6173a graphs pulse time (t p ) figure 1 peak pulse power vs. pulse time junction temperature (t j ) in c figure 2 peak pulse power vs t j (prior to impulse) peak pulse power (p pp ) max peak puls e power (p pp ) or current (i pp ) in percent of max ratings
t4 - lds - 0 278, rev . 1 (12 1355) ?201 3 microsemi corporation page 5 of 7 1n6139 a ? 1n6173a graphs time (t) in milliseconds figure 3 pulse wave form t a (c) (ambient) figure 4 temperature - power derating curve pulse current (i pp) in percent of i pp dc operation ng (w) maximum ratio
t4 - lds - 0 278, rev . 1 (12 1355) ?201 3 microsemi corporation page 6 of 7 1n6139 a ? 1n6173a graphs ambient temperat ure (t a ) in c figure 5 steady - state derating curve for free - air mounting (r ja = 50 oc /w) maximum steady - state power in watts
t4 - lds - 0 278, rev . 1 (12 1355) ?201 3 microsemi corporation page 7 of 7 1n6139 a ? 1n6173a package dimensions l tr d imensions n o t es i nches m illime t e rs m i n m a x m i n m a x bd 0 . 1 35 0 . 185 3.43 4 . 70 3 bl 0 .140 0 .195 3.56 4.95 ld 0 .036 0 .042 0.91 1 . 07 ll 1.00 1.30 25.4 33 . 02 l 1 - 0 .030 - 0.76 4 sc h e m a t i c sy m bo l n o t es: 1 . d imension s a re i n inches . 2 . m illime t e rs a re gi v e n f o r gener a l in f o r ma t io n onl y . 3 . dimension bd shall be measured at the largest diamete r . 4 . dimension l1 lead diameter uncontrolled in this area . 5 . in acco r danc e w i th asm e y 14. 5 m , diame t e rs a re equi v alen t to x s y mbolog y .
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